Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP
نویسندگان
چکیده
منابع مشابه
Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse.
With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 10(6) and a high sensitivity...
متن کاملGrowth of InP high electron mobility transistor structures with Te doping
InP high electron mobility transistor (HEMT) structures with In0.53Ga0.47As channels and In0.52Al0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50–100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000–10,000...
متن کاملHigh Power Performance InP/InGaAs Single HBTs
In this study, singleand multiple-finger HBTs were fabricated from epilayers grown in-house by low-pressure metal organic vapor phase epitaxy (LP-MOVPE). Disilane and DEZn were used for Si and Zn sources for nand p-type doping. The gas switching sequences were optimized for optimal layers and layer interfaces. The HBTs were fabricated with a double selfaligned wet-etch process designed for redu...
متن کاملInAs/InP radial nanowire heterostructures as high electron mobility devices.
Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed sing...
متن کاملCryogenic Ultra-Low Noise InP High Electron Mobility Transistors
iii List of publications v Notations and abbreviations vii
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.5000935